Publications

APEX develops technical publications about its R&D activities in power electronics materials and manufacturing exploration.

Publication Title Year Journal/Publisher
Do We Really Need All That Data: From Data to Agency in Automated Microscopy 2026 Microscopy Today
Performance of Heterostructural TaC/AlGaN Schottky Diodes Based on First Principles Electronic Structure Properties 2026 APL Computational Physics
Phonon Selection and Interference in Momentum-Resolved Electron Energy Loss Spectroscopy 2026 arXiv
Low Temperature Growth of AlGaN by Halide Vapor Phase Epitaxy 2026 arXiv
Thermally Desorbed InN Capping Layers for Nitride Surface Science 2026 arXiv
Fast Epitaxial Growth of Ga2O3 on Highly-Offcut (100)-Oriented Substrates 2026 arXiv
Born-Qualified: An Autonomous Framework for Deploying Advanced Energy and Electronic Materials 2026 arXiv
Revealing the Atomic Structure of NiO/Ga2O3 Interfaces 2026 arXiv
Low Resistance NiO/β-Ga2O3 Heterojunction Diodes Grown via Molecular Beam Epitaxy 2026 arXiv
Enhanced Thermal Conductivity of (010) (AlxGa1−x)2O3 Epitaxial Films Utilizing Indium-Catalyzed Molecular Beam Epitaxy 2026 arXiv
Revealing Epitaxial Relationships at Ga2O3 Interfaces With P-Type Oxides 2026 arXiv
Face-to-Face Anneal Temperature Controls Lattice Parameter in Ta(C,N) Virtual Substrates for AlGaN Power Electronics 2026 arXiv
Scandium Diboride: A Semi-Metallic, Lattice, Thermally Matched Substrate for Vertical AlGaN Power Electronics 2026 arXiv
Balancing Autonomy and Oversight in Language-Agent-Guided Physical Experimentation 2026 Research Square
A Transport Framework for Evaluating Nanoscale Interconnect Materials: A Tutorial 2026 arXiv
Impact of Dislocation Motion on Interdiffusion, Structuring, and Thermal Transport at Ge–Si Heterointerface 2026 Journal of Applied Physics
Crystal Growth and Characterization of the Ultra-High Temperature Substrate Ta1−xHfxC0.5 2026 Crystal Growth & Design
Emerging Ultra-Wide Band Gap Semiconductors For Future High-Frequency Electronics 2025 arXiv
Understanding Phonon Selection and Interference In Momentum-Resolved Electron Energy Loss Spectroscopy 2025 arXiv
Infrared Phonon Thermoreflectance in Polar Dielectrics 2025 arXiv
Epitaxial Growth and Semiconductor Properties of NiGa2O4 Spinel for Ga2O3/NiO Interfaces 2025 arXiv
Reduced Thermal Resistance of Al-rich AlGaN HEMTs via Top-side Diamond Integration 2025 APL Electronic Devices
Dielectric Properties of Conducting Boron-Doped Diamond 2025 Applied Optics
Temperature Invariant, Nearly Zero Temperature Coefficient of Resistivity in Si-Doped Titanium Nitrides 2025 Advanced Materials
Self-Driving Microscopy for Ai/Ml-Enabled Physics Discovery and Materials Optimization 2025 The Bridge
Characterization of Extended Defect Evolution in 1.2–12 µm Thick Homoepitaxial (010) β-Ga2O3 Grown by Close-Injection Showerhead Metal-Organic Chemical Vapor Deposition 2025 APL Materials
Emerging Ultra-Wide Band Gap Semiconductors for Future High-Frequency Electronics 2025 arXiv
Stability, Growth, and Doping of In2(Si, Ge)2O7: Promising N-Type Wide-Bandgap Semiconductors 2025 APL Materials

Share

Last Updated Nov. 3, 2026