Combinatorial Depositions
For materials discovery and design, NREL has a variety of combinatorial thin-film deposition instruments, using physical vapor deposition methods for high-throughput experiments.
Co-Sputtering of Oxides and Nitrides
Combinatorial Chamber: No. 5
Materials: Nitrides
Substrates: <4" diameter, <800C
Targets: 2" circular
Gases: Ar, N, N2/H2
Base pressure: 10-9-10-8 Torr
Features: Load lock, N plasma source, cryoshroud, and in-vacuo source shifts
Publications:
Synthesis Pathways to Thin Films of Stable Layered Nitrides, Nature Synthesis (2024)
GdWN3 Is A Nitride Perovskite, Applied Physics Letters (2024)
Structural and Optoelectronic Properties of Thin Film LaWN3, Physical Review Materials (2023)
Reduced Synthesis Temperatures of SrNbO2N Perovskite Films for Photoelectrochemical Fuel Production, Journal of Materials Research (2022)

Combinatorial Chamber: No. 6
Materials: Oxides, nitrides, and oxynitride
Substrates: <6" square, <600C
Targets: 3" circular
Gases: Ar, O, N, N2/H2
Base pressure: 10-9-10-8 Torr
Features: load lock, N plasma source, and vacuum transfer
Publications:
Combinatorial Synthesis of Cation-Disordered Manganese Tin Nitride MnSnN2 Thin Films with Magnetic and Semiconducting Properties, Chemistry of Materials (2023)
Exploring the Phase Space of Zn2SbN3, a Novel Semiconducting Nitride, Journal of Materials Chemistry C (2021)
Combinatorial Investigation of Structural and Optical Properties of Cation-Disordered ZnGeN2, J. Mat. Chem. C (2020)
Combinatorial Synthesis of Magnesium Tin Nitride Semiconductors, J. Am. Chem. Soc. (2020)

Combinatorial Chamber: No. 9
Materials: Nitrides and oxynitrides
Substrates: <4" diameter, <1000C
Targets: 2" circular
Gases: Ar, O, N, N2/H2
Base pressure: 10-9-10-8 Torr
Features: N hollow cathode plasma source, LN2 substrate cooling, in-vacuo source angle adjustment,
and individual gas control for all metal sources
Publications:
Sn-Assisted Heteroepitaxy Improves ZnTiN2 Photoabsorbers, Journal of Materials Chemistry A (2024)
Autonomous Sputter Synthesis of Thin Film Nitrides With Composition Controlled by Bayesian Optimization of Optical Plasma Emission, APL Materials (2023)
Synthesis and Calculations of Wurtzite Al1–xGdxN Heterostructural Alloys, Chemistry of Materials (2022)

Combinatorial Chamber: No. 10
Materials: Nitrides
Substrates: <4" diameter, <800C
Targets: 3" circular
Gases: Ar, N
Base pressure: 10-9-10-8 Torr
Features: Dedicated to (Al,Sc)N and related materials
Publications:
Combinatorial Synthesis and Characterization of Thin Film Al1-xRExN (RE = Pr3+, Tb3+) Heterostructural Alloys, Journal of Materials Chemistry C (2024)
Synthesis and Calculations of Wurtzite Al1–xGdxN Heterostructural Alloys, Chemistry of Materials (2022)
Reduced Coercive Field in Epitaxial Thin Film of Ferroelectric Wurtzite Al0.7Sc0.3N, Applied Physics Letters (2021)
Understanding Reproducibility of Sputter Deposited Metastable Ferroelectric Wurtzite Al0.6Sc0.4N Films using In‐situ Optical Emission Spectrometry, Rapid Research Letters (2021)

Co-Sputtering of Other Materials
Combinatorial Chamber: No. 1
Materials: Metals, carbides and nitrides
Substrates: < 3" diameter, < 800C
Targets: 2" circular
Gases: Ar, O, N, N2/H2
Base pressure: 10-7-10-6 Torr
Features: N/O plasma source
Publications:
Theoretical Prediction and Experimental Realization of New Stable Inorganic Materials Using the Inverse Design Approach, J. Am. Chem. Soc. (2013)
X-ray Photoelectron Spectroscopy and Rotating Disk Electrode Measurements of Smooth Sputtered Fe-N-C Films, Applied Surface Science (2020)

Combinatorial Chamber: No. 4
Materials: Chalcogenides and oxychalcogenides
Substrates: <4" diameter, <800C
Targets: 2" circular
Gases: Ar, O, Ar/H2S
Base pressure: 10-8-10-7 Torr
Features: Load lock, S plasma source, vacuum transfer, programmable shutters, and source-specific
quartz crystal microbalances
Publications:
Nitrogen Stabilizes the Wurtzite Polymorph in ZnSe1−xTex Thin Films, Journal of Materials Chemistry C (2022)
Synthesis of Tunable SnS-TaS2 Nanoscale Superlattices, Nano Letters (2020)
Negative-Pressure Polymorphs Made by Heterostructural Alloying, Science Advances (2018)

Combinatorial Chamber: No. 7
Materials: Li-containing materials
Substrates: <4" diameter, <800C
Targets: 3" circular
Gases: Ar, O, N
Base pressure: 10-9-10-8 Torr
Features: Glove box and co-evaporation
Publications:
Chemistry of Electrolyte Reduction on Lithium Silicide, J. Phys. Chem. C (2019)
Investigating the Effects of Lithium Phosphorous Oxynitride Coating on Blended Solid Polymer Electrolytes, ACS Appl. Mater. Interfaces (2020)
Lithium Nitride Coatings Deposited by Magnetron Sputtering on Sulfide Electrolytes for Solid-State Batteries, MRS Communications (2022)

Combinatorial Chamber: No. 8
Materials: Phosphides
Substrates: <4" diameter, <800 °C
Targets: 2" circular
Gases: Ar, Ar/PH3
Base pressure: 10-9-10-8 Torr
Features: Load-lock
Publications:
Low-Temperature Synthesis of Stable CaZn2P2 Zintl Phosphide Thin Films as Candidate Top Absorbers, Advanced Energy Materials (2024)
Is Cu3–xP a Semiconductor, a Metal, or a Semimetal?, Chemistry of Materials (2023)
Epitaxial ZnGeP2 Thin Films on Si and GaP by Reactive Combinatorial Sputtering in Phosphine, Crystal Growth & Design (2022)
Crystallize It Before It Diffuses: Kinetic Stabilization of Thin-Film Phosphorus-Rich Semiconductor CuP2, Journal of the American Chemical Society (2022)
Boron Phosphide Films by Reactive Sputtering: Searching for a P-Type Transparent Conductor, Advanced Materials Interfaces (2022)

Combinatorial Pulsed Laser Deposition
Combinatorial Chamber: No. 3
Materials: Oxides
Substrates: <4" diameter, <800C
Targets: 1" or 2" circular
Gases: Ar, O, N, N2/H2
Base pressure: 10-9-10-8 Torr
Features: Load lock
Publications:
Nucleation and Growth of GaAs on a Carbon Release Layer by Halide Vapor Phase Epitaxy, ACS Omega (2023)
Double-Site Ce Substitution of (Ba,Sr)MnO3 Perovskites for Solar Thermochemical Hydrogen Production, ACS Energy Letters (2021)
High-Throughput Experimental Study of Wurtzite Mn1–xZnxO Alloys for Water Splitting Applications, ACS Omega (2019)
Defect Chemistry and Doping of Ultrawide Band Gap (III)BO3 Compounds, Chemistry of Materials (2023)

Contacts
Share
Last Updated July 9, 2025